Technical Analysis for 4DS - 4DS Memory Ltd
| ADX | Long Term | Intermediate Term | Short Term |
|---|---|---|---|
| Weak or Absent | Down | Down | Down |
| Date | Alert Name | Type | % Chg |
|---|---|---|---|
| 20 DMA Resistance | Bearish | -3.26% | |
| Stochastic Buy Signal | Bullish | -3.26% | |
| Bollinger Band Squeeze | Range Contraction | -3.26% | |
| Gapped Up | Strength | -3.26% | |
| Oversold Stochastic | Weakness | -3.26% | |
| Bollinger Band Squeeze | Range Contraction | 2.30% | |
| Narrow Range Bar | Range Contraction | 2.30% | |
| Inside Day | Range Contraction | 2.30% | |
| Oversold Stochastic | Weakness | 2.30% | |
| Bollinger Band Squeeze | Range Contraction | 2.30% |
| Alert | Time |
|---|---|
| Down 3% | about 5 hours ago |
| Down 2% | about 5 hours ago |
| Down 1% | about 5 hours ago |
| Fell Below 10 DMA | about 5 hours ago |
| 20 DMA Resistance | 2 days ago |
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4DS Memory Ltd Description
4DS Memory Limited, formerly Fitzroy Resources Ltd., is an Australia-based company, which is principally engaged in the development of resistive random access memory (ReRAM), a non-volatile memory. In collaboration with HGST, the Company is developing a non-filamentary ReRAM, which is suitable for gigabyte (GB) silicon storage at smaller geometries. ReRAM is used for next generation storage in mobile and cloud. The Company owns Internet protocol portfolio developed to create high-density gigabyte storage. The Company's Interface Switching ReRAM is suitable for markets that require high-density memory and gigabyte silicon storage. The Company has non-volatile memory solution, which enables higher density memory to operate longer when compared to traditional storage technologies. The Company has its research and development facilities located in Fremont in Silicon Valley, the United States.
Classification
Sector: Technology
Industry: Semiconductor Memory
Keywords: Computing Internet Storage Emerging Technologies Tile Internet Protocol Switch Collaboration Computer Architecture Computer Data Storage Computer Memory Non Volatile Memory Non Volatile Random Access Memory Random Access Memory Resistive Random Access Memory
| Indicator | Bull Case | Neutral / Hold | Bear Case |
|---|---|---|---|
| 50 DMA | |||
| 200 DMA | |||
| ADX Trend | |||
| Oversold / Overbought | |||
| Relative Strength |
| Indicator | Value |
|---|---|
| 52 Week High | 0.215 |
| 52 Week Low | 0.025 |
| Average Volume | 6,467,731 |
| 200-Day Moving Average | 0.095 |
| 50-Day Moving Average | 0.101 |
| 20-Day Moving Average | 0.093 |
| 10-Day Moving Average | 0.091 |
| Average True Range | 0.006 |
| RSI (14) | 45.05 |
| ADX | 17.0 |
| +DI | 25.030 |
| -DI | 20.641 |
| Chandelier Exit (Long, 3 ATRs) | 0.087 |
| Chandelier Exit (Short, 3 ATRs) | 0.104 |
| Upper Bollinger Bands | 0.103 |
| Lower Bollinger Band | 0.083 |
| Percent B (%b) | 0.45 |
| BandWidth | 20.883 |
| MACD Line | -0.003 |
| MACD Signal Line | -0.002 |
| MACD Histogram | -0.0005 |
| Pivot Point Level | Traditional / Classic | Fibonacci | Demark | Woodie | Camarilla |
|---|---|---|---|---|---|
| Resistance 4 (R4) | 0.098 | ||||
| Resistance 3 (R3) | 0.098 | 0.095 | 0.097 | ||
| Resistance 2 (R2) | 0.095 | 0.094 | 0.096 | 0.097 | |
| Resistance 1 (R1) | 0.094 | 0.093 | 0.095 | 0.094 | 0.096 |
| Pivot Point | 0.091 | 0.091 | 0.092 | 0.092 | 0.091 |
| Support 1 (S1) | 0.090 | 0.090 | 0.091 | 0.090 | 0.088 |
| Support 2 (S2) | 0.087 | 0.089 | 0.088 | 0.087 | |
| Support 3 (S3) | 0.086 | 0.087 | 0.087 | ||
| Support 4 (S4) | 0.086 |
