Technical Analysis for 4DS - 4DS Memory Ltd
| ADX | Long Term | Intermediate Term | Short Term |
|---|---|---|---|
| Strong | Down | Up | Up |
| Date | Alert Name | Type | % Chg |
|---|---|---|---|
| Upper Bollinger Band Walk | Strength | 0.00% | |
| Inside Day | Range Contraction | 0.00% | |
| Gapped Up | Strength | 0.00% | |
| 200 DMA Resistance | Bearish | 0.00% | |
| Calm After Storm | Range Contraction | 0.00% | |
| Upper Bollinger Band Walk | Strength | 0.00% | |
| Upper Bollinger Band Touch | Strength | 0.00% | |
| Down 3 Days in a Row | Weakness | 0.00% | |
| 200 DMA Resistance | Bearish | -1.23% | |
| New Uptrend | Bullish | -1.23% |
| Alert | Time |
|---|---|
| Possible Inside Day | about 13 hours ago |
| Gap Up Closed | about 16 hours ago |
| Reversed from Up | about 16 hours ago |
| Gap Up Partially Closed | about 16 hours ago |
| Gapped Up (Partial) | about 17 hours ago |
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4DS Memory Ltd Description
4DS Memory Limited, formerly Fitzroy Resources Ltd., is an Australia-based company, which is principally engaged in the development of resistive random access memory (ReRAM), a non-volatile memory. In collaboration with HGST, the Company is developing a non-filamentary ReRAM, which is suitable for gigabyte (GB) silicon storage at smaller geometries. ReRAM is used for next generation storage in mobile and cloud. The Company owns Internet protocol portfolio developed to create high-density gigabyte storage. The Company's Interface Switching ReRAM is suitable for markets that require high-density memory and gigabyte silicon storage. The Company has non-volatile memory solution, which enables higher density memory to operate longer when compared to traditional storage technologies. The Company has its research and development facilities located in Fremont in Silicon Valley, the United States.
Classification
Sector: Technology
Industry: Semiconductor Memory
Keywords: Computing Internet Storage Emerging Technologies Tile Internet Protocol Switch Collaboration Computer Architecture Computer Data Storage Computer Memory Non Volatile Memory Non Volatile Random Access Memory Random Access Memory Resistive Random Access Memory
| Indicator | Bull Case | Neutral / Hold | Bear Case |
|---|---|---|---|
| 50 DMA | |||
| 200 DMA | |||
| ADX Trend | |||
| Oversold / Overbought | |||
| Relative Strength |
| Indicator | Value |
|---|---|
| 52 Week High | 0.145 |
| 52 Week Low | 0.067 |
| Average Volume | 2,182,271 |
| 200-Day Moving Average | 0.085 |
| 50-Day Moving Average | 0.076 |
| 20-Day Moving Average | 0.075 |
| 10-Day Moving Average | 0.078 |
| Average True Range | 0.005 |
| RSI (14) | 57.63 |
| ADX | 29.31 |
| +DI | 28.693 |
| -DI | 11.648 |
| Chandelier Exit (Long, 3 ATRs) | 0.074 |
| Chandelier Exit (Short, 3 ATRs) | 0.082 |
| Upper Bollinger Bands | 0.086 |
| Lower Bollinger Band | 0.064 |
| Percent B (%b) | 0.75 |
| BandWidth | 29.223 |
| MACD Line | 0.002 |
| MACD Signal Line | 0.000 |
| MACD Histogram | 0.0012 |
| Pivot Point Level | Traditional / Classic | Fibonacci | Demark | Woodie | Camarilla |
|---|---|---|---|---|---|
| Resistance 4 (R4) | 0.086 | ||||
| Resistance 3 (R3) | 0.087 | 0.085 | 0.085 | ||
| Resistance 2 (R2) | 0.085 | 0.084 | 0.085 | 0.085 | |
| Resistance 1 (R1) | 0.083 | 0.083 | 0.082 | 0.082 | 0.084 |
| Pivot Point | 0.081 | 0.081 | 0.081 | 0.081 | 0.081 |
| Support 1 (S1) | 0.079 | 0.080 | 0.078 | 0.078 | 0.076 |
| Support 2 (S2) | 0.077 | 0.079 | 0.077 | 0.075 | |
| Support 3 (S3) | 0.075 | 0.077 | 0.075 | ||
| Support 4 (S4) | 0.074 |
